发明申请
US20090146265A1 ULTRA LOW k PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION PROCESSES USING A SINGLE BIFUNCTIONAL PRECURSOR CONTAINING BOTH A SiCOH MATRIX FUNCTIONALITY AND ORGANIC POROGEN FUNCTIONALITY
有权
超低k等离子体增强化学气相沉积工艺使用单个双功能前体，包含SiCOH基质功能和有机多孔功能
- 专利标题： ULTRA LOW k PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION PROCESSES USING A SINGLE BIFUNCTIONAL PRECURSOR CONTAINING BOTH A SiCOH MATRIX FUNCTIONALITY AND ORGANIC POROGEN FUNCTIONALITY
- 专利标题（中）： 超低k等离子体增强化学气相沉积工艺使用单个双功能前体，包含SiCOH基质功能和有机多孔功能
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申请号： US12371180申请日： 2009-02-13
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公开(公告)号： US20090146265A1公开(公告)日： 2009-06-11
- 发明人: Son Van Nguyen , Stephen McConnell Gates , Deborah A. Neumayer , Alfred Grill
- 申请人： Son Van Nguyen , Stephen McConnell Gates , Deborah A. Neumayer , Alfred Grill
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L23/58
- IPC分类号： H01L23/58
摘要：
A method for fabricating a SiCOH dielectric material comprising Si, C, O and H atoms from a single organosilicon precursor with a built-in organic porogen is provided. The single organosilicon precursor with a built-in organic porogen is selected from silane (SiH4) derivatives having the molecular formula SiRR1R2R3, disiloxane derivatives having the molecular formula R4R5R6—Si—O—Si—R7R8R9, and trisiloxane derivatives having the molecular formula R10R11R12—Si—O—Si—R13R14—O—Si—R15R16R17 where R and R1-17 may or may not be identical and are selected from H, alkyl, alkoxy, epoxy, phenyl, vinyl, allyl, alkenyl or alkynyl groups that may be linear, branched, cyclic, polycyclic and may be functionalized with oxygen, nitrogen or fluorine containing substituents. In addition to the method, the present application also provides SiCOH dielectrics made from the inventive method as well as electronic structures that contain the same.
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