发明申请
- 专利标题: SEMICONDUCTOR DEVICE THERMAL CONNECTION
- 专利标题(中): 半导体器件热连接
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申请号: US11950819申请日: 2007-12-05
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公开(公告)号: US20090146292A1公开(公告)日: 2009-06-11
- 发明人: Peter J. Drake , Chad E. Boyack , Kevin Andrew Paulson , James E. Faoro , Cynthia Robin Nelson Konen , Steven N. Peterson , George R. Cunnington , James R. Myers , Isis Roche-Rios
- 申请人: Peter J. Drake , Chad E. Boyack , Kevin Andrew Paulson , James E. Faoro , Cynthia Robin Nelson Konen , Steven N. Peterson , George R. Cunnington , James R. Myers , Isis Roche-Rios
- 主分类号: H01L23/373
- IPC分类号: H01L23/373 ; H01L21/02
摘要:
A semiconductor device thermal connection used to remove heat from a semiconductor device, such as an integrated circuit, includes a metallic barrier layer on the semiconductor device, and a high thermal conductivity material on the metallic barrier layer that joins the semiconductor device to a thermal heat spreader. The metallic barrier layer may be one or more sputtered layers, and the high thermal conductivity material may be a metallic material, for instance including indium, that is soldered onto the sputtered material. The high thermal conductivity material may form a primary thermal connection in conducting heat away from the semiconductor device. A secondary thermal connection may be made between the heat spreader and a heat sink. The secondary thermal connection may include a compressible solid carbon fiber material. A diaphragm may be used to contain the carbon fiber material, to prevent carbon fibers from coming into contact with the semiconductor device.
公开/授权文献
- US07880298B2 Semiconductor device thermal connection 公开/授权日:2011-02-01