Provided is a method of fabricating a vertical cavity surface emitting laser among semiconductor optical devices, comprising: bonding a dielectric mirror layer to an epi-structure having a mirror layer and an active layer; bonding these on a new substrate using a metal bonded method; removing the existing substrate; and fabricating a vertical cavity surface emitting laser on the new substrate. The method of fabricating the vertical cavity surface emitting laser is performed by moving and attaching a vertical cavity surface emitting laser to a new substrate using an external metallic bonding method, without electrically and optically affecting upper and lower mirrors and an active layer that constitutes the vertical cavity surface emitting laser. While using the existing method of fabricating the vertical cavity surface emitting laser, the VCSEL is fabricated by moving to a new substrate having good thermal characteristics so that good heat emission characteristics are accomplished, thus facilitating manufacture of the vertical cavity surface emitting laser having high reliability and good characteristics.