发明申请
US20090159567A1 POLYMER SOLUTION FOR NANOIMPRINT LITHOGRAPHY TO REDUCE IMPRINT TEMPERATURE AND PRESSURE
审中-公开
用于纳米压印的聚合物溶液降低印刷温度和压力
- 专利标题: POLYMER SOLUTION FOR NANOIMPRINT LITHOGRAPHY TO REDUCE IMPRINT TEMPERATURE AND PRESSURE
- 专利标题(中): 用于纳米压印的聚合物溶液降低印刷温度和压力
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申请号: US12396963申请日: 2009-03-03
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公开(公告)号: US20090159567A1公开(公告)日: 2009-06-25
- 发明人: Gun Young Jung , Sivapackia Ganapathiappan , Yong Chen , R. Stanley Williams
- 申请人: Gun Young Jung , Sivapackia Ganapathiappan , Yong Chen , R. Stanley Williams
- 主分类号: B44C1/22
- IPC分类号: B44C1/22 ; B29C35/08
摘要:
An improved method of forming features on substrates by imprinting is provided. In the method, a polymer solution that contains at least one polymer dissolved in at least one polymerizable monomer and the polymer solution is deposited on the substrate to form a liquid film thereon. Further, the liquid film is cured by causing the at least one monomer to polymerize and optionally cross-linking the at least one polymer to thereby form a polymer film, the polymer film having a glass transition temperature of less than 100° C., and the polymer film is imprinted with a mold having a desired pattern to form a corresponding negative pattern in the polymer film. Alternatively, the liquid film is imprinted with the mold and the liquid film is cured in the presence of the mold to form the polymer film with the negative pattern.