发明申请
US20090159991A1 CMOS DEVICES WITH DIFFERENT METALS IN GATE ELECTRODES USING SPIN ON LOW-K MATERIAL AS HARD MASK
有权
使用低K材料作为硬掩模旋转的门电极中具有不同金属的CMOS器件
- 专利标题： CMOS DEVICES WITH DIFFERENT METALS IN GATE ELECTRODES USING SPIN ON LOW-K MATERIAL AS HARD MASK
- 专利标题（中）： 使用低K材料作为硬掩模旋转的门电极中具有不同金属的CMOS器件
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申请号： US11960881申请日： 2007-12-20
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公开(公告)号： US20090159991A1公开(公告)日： 2009-06-25
- 发明人: Bernd Ernst Eduard Kastenmeier , Byoung Hun Lee , Naim Moumen , Theodorus Eduardus Standaert
- 申请人： Bernd Ernst Eduard Kastenmeier , Byoung Hun Lee , Naim Moumen , Theodorus Eduardus Standaert
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/8238
摘要：
A semiconductor structure and a method of forming the same. The semiconductor structure includes a semiconductor substrate, a gate dielectric layer on top of the semiconductor substrate. The structure also includes a first metal containing region on top of the gate dielectric layer. The structure also includes a second metal containing region on top of the gate dielectric layer wherein the first and second metal containing regions are in direct physical contact with each other. The structure further includes a gate electrode layer on top of both the first and second metal containing regions and the gate electrode layer is in direct physical contact with both the first and second metal containing regions. The structure further includes a patterned photoresist layer on top of the gate electrode layer.
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