发明申请
US20090161189A1 METHOD OF MANUFACTURING A STRUCTURE BASED ON ANISOTROPIC ETCHING, AND SILICON SUBSTRATE WITH ETCHING MASK
审中-公开
基于异相蚀刻的结构的制造方法和具有蚀刻掩模的硅基板
- 专利标题： METHOD OF MANUFACTURING A STRUCTURE BASED ON ANISOTROPIC ETCHING, AND SILICON SUBSTRATE WITH ETCHING MASK
- 专利标题（中）： 基于异相蚀刻的结构的制造方法和具有蚀刻掩模的硅基板
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申请号： US12333910申请日： 2008-12-12
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公开(公告)号： US20090161189A1公开(公告)日： 2009-06-25
- 发明人: Kaoru Noguchi , Yoshio Hotta , Kazutoshi Torashima , Yutaka Setomoto
- 申请人： Kaoru Noguchi , Yoshio Hotta , Kazutoshi Torashima , Yutaka Setomoto
- 申请人地址： JP Tokyo
- 专利权人： CANON KABUSHIKI KAISHA
- 当前专利权人： CANON KABUSHIKI KAISHA
- 当前专利权人地址： JP Tokyo
- 优先权： JP2007-327510 20071219
- 主分类号： G02B26/08
- IPC分类号： G02B26/08 ; G03F7/20 ; G03F1/00
摘要：
A method of manufacturing a structure that includes a mask forming step for forming, on a monocrystal silicon substrate, a base etching mask corresponding to a target shape and a correction etching mask having a joint connecting to the base etching mask, and a target shape forming step for forming the target shape by anisotropically etching the silicon substrate, wherein, in the mask forming step, a lowered-strength portion where a mechanical strength is locally decreased is formed at least in a portion of the joint of the correction etching mask.
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