发明申请
- 专利标题: Method of forming a wafer level package
- 专利标题(中): 形成晶片级封装的方法
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申请号: US12315855申请日: 2008-12-04
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公开(公告)号: US20090162975A1公开(公告)日: 2009-06-25
- 发明人: Kenneth Allen Honer , Belgacem Haba , David Ovrutsky , Charles Rosenstein , Guilian Gao
- 申请人: Kenneth Allen Honer , Belgacem Haba , David Ovrutsky , Charles Rosenstein , Guilian Gao
- 申请人地址: US CA San Jose
- 专利权人: Tessera, Inc.
- 当前专利权人: Tessera, Inc.
- 当前专利权人地址: US CA San Jose
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
A method is provided for forming a microelectronic package at a wafer level. Such method can include providing a semiconductor wafer having a surface with a pattern of electrical contacts thereon. An interposer component can be provided which has a compliant dielectric layer bonded to a conductive layer. A pattern of holes can be formed through the compliant dielectric layer and the conductive layer which corresponds to the pattern of electrical contacts. The compliant dielectric layer can be contacted with the semiconductor wafer surface so that the pattern of holes is in an aligned position with the pattern of contacts and the compliant dielectric layer and the semiconductor wafer surface then bonded in the aligned position to unite the semiconductor wafer and the interposer component to form a wafer level semiconductor package. The wafer level semiconductor package can be diced to form individual semiconductor chip packages.
公开/授权文献
- US08053281B2 Method of forming a wafer level package 公开/授权日:2011-11-08