发明申请
US20090166680A1 Unity beta ratio tri-gate transistor static radom access memory (SRAM)
有权
Unity beta比例三栅晶体管静态天线存取存储器（SRAM）
- 专利标题： Unity beta ratio tri-gate transistor static radom access memory (SRAM)
- 专利标题（中）： Unity beta比例三栅晶体管静态天线存取存储器（SRAM）
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申请号： US12006082申请日： 2007-12-28
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公开(公告)号： US20090166680A1公开(公告)日： 2009-07-02
- 发明人: Ravi Pillarisetty , Suman Datta , Jack Kavalieros , Brian S. Doyle , Uday Shah
- 申请人： Ravi Pillarisetty , Suman Datta , Jack Kavalieros , Brian S. Doyle , Uday Shah
- 主分类号： H01L27/11
- IPC分类号： H01L27/11 ; H01L21/8244
摘要：
In general, in one aspect, a method includes forming N-diffusion and P-diffusion fins in a semiconductor substrate. A P-diffusion gate layer is formed over the semiconductor substrate and removed from the N-diffusion fins. A pass-gate N-diffusion gate layer is formed over the semiconductor substrate and removed from the P-diffusion fins and pull-down N-diffusion fins. A pull-down N-diffusion layer is formed over the semiconductor substrate.
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