发明申请
- 专利标题： TRENCH-TYPE SEMICONDUCTOR DEVICE STRUCTURE
- 专利标题（中）： TRENCH型半导体器件结构
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申请号： US12177756申请日： 2008-07-22
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公开(公告)号： US20090166702A1公开(公告)日： 2009-07-02
- 发明人: Shian-Jyh LIN , Ming-Cheng Chang , Neng Tai Shih , Hung-Chang Liao
- 申请人： Shian-Jyh LIN , Ming-Cheng Chang , Neng Tai Shih , Hung-Chang Liao
- 申请人地址： TW Taoyuan
- 专利权人： NANYA TECHNOLOGY CORP.
- 当前专利权人： NANYA TECHNOLOGY CORP.
- 当前专利权人地址： TW Taoyuan
- 优先权： TW97100111 20080102
- 主分类号： H01L27/108
- IPC分类号： H01L27/108
摘要：
A trench-type semiconductor device structure is disclosed. The structure includes a semiconductor substrate, a gate dielectric layer and a substrate channel structure. The semiconductor substrate includes a trench having an upper portion and a lower portion. The upper portion includes a conductive layer formed therein. The lower portion includes a trench capacitor formed therein. The gate dielectric layer is located between the semiconductor substrate and the conductive layer. The substrate channel structure with openings, adjacent to the trench, is electrically connected to the semiconductor substrate via the openings.
公开/授权文献
- US07985998B2 Trench-type semiconductor device structure 公开/授权日：2011-07-26
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