发明申请
- 专利标题： SiC semiconductor device having bottom layer and method for manufacturing the same
- 专利标题（中）： 具有底层的SiC半导体器件及其制造方法
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申请号： US12318183申请日： 2008-12-23
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公开(公告)号： US20090166730A1公开(公告)日： 2009-07-02
- 发明人: Eiichi Okuno , Naohiro Suzuki , Nobuyuki Kato
- 申请人： Eiichi Okuno , Naohiro Suzuki , Nobuyuki Kato
- 申请人地址： JP Kariya-city
- 专利权人： DENSO CORPORATION
- 当前专利权人： DENSO CORPORATION
- 当前专利权人地址： JP Kariya-city
- 优先权： JP2007-334104 20071226
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336
摘要：
A SiC semiconductor device includes: a substrate; a drift layer on the substrate; a trench on the drift layer; a base region in the drift layer sandwiching the trench; a channel between the base region and the trench; a source region in the base region sandwiching the trench via the channel; a gate electrode in the trench via a gate insulation film; a source electrode coupled with the source region; a drain electrode on the substrate opposite to the drift layer; and a bottom layer under the trench. An edge portion of the bottom layer under a corner of a bottom of the trench is deeper than a center portion of the bottom layer under a center portion of the bottom of the trench.
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