发明申请
- 专利标题： METAL OXIDE SEMICONDUCTOR TRANSISTOR WITH Y SHAPE METAL GATE
- 专利标题（中）： 具有Y形金属栅的金属氧化物半导体晶体管
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申请号： US12395715申请日： 2009-03-02
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公开(公告)号： US20090166766A1公开(公告)日： 2009-07-02
- 发明人: Chin-Hsiang Lin , Chia-Jung Hsu , Li-Wei Cheng
- 申请人： Chin-Hsiang Lin , Chia-Jung Hsu , Li-Wei Cheng
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
A metal oxide semiconductor (MOS) transistor with a Y structure metal gate is provided. The MOS transistor includes a substrate, a Y structure metal gate positioned on the substrate, two doping regions disposed in the substrate on two sides of the Y structure metal structure, a spacer, an insulating layer positioned outside the spacer, a dielectric layer positioned outside the insulating layer and a bevel edge covering the spacer. The spacer has a vertical sidewall, and the vertical sidewall surrounds a recess. A part of the Y structure metal gate is disposed in the recess, and a part of the Y structure metal gate is positioned on the bevel edge.
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