发明申请
- 专利标题： Reduced Leakage Voltage Level Shifting Circuit
- 专利标题（中）： 降低泄漏电压电平转换电路
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申请号： US12339800申请日： 2008-12-19
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公开(公告)号： US20090167405A1公开(公告)日： 2009-07-02
- 发明人: Samu Suryanarayana , Arvind Bomdica , Yikai Liang
- 申请人： Samu Suryanarayana , Arvind Bomdica , Yikai Liang
- 申请人地址： US CA Sunnyvale
- 专利权人： Advanced Micro Devices, Inc.
- 当前专利权人： Advanced Micro Devices, Inc.
- 当前专利权人地址： US CA Sunnyvale
- 主分类号： H03L5/00
- IPC分类号： H03L5/00
摘要：
A level shifting circuit includes a first stage and a second stage. The first stage and second stage are operatively coupled to a first and second power supply. The first stage translates a differential input voltage into an intermediate differential voltage. The second stage translates the intermediate differential voltage into a differential output voltage and provides feedback to the first stage in response to translating the intermediate differential voltage. The first stage reduces current flow between the first and second power supply through the second stage in response to the feedback.
公开/授权文献
- US07659768B2 Reduced leakage voltage level shifting circuit 公开/授权日：2010-02-09
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