发明申请
- 专利标题： Three dimensional hexagonal matrix memory array
- 专利标题（中）： 三维六边形矩阵记忆阵列
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申请号： US12005346申请日： 2007-12-27
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公开(公告)号： US20090168480A1公开(公告)日： 2009-07-02
- 发明人: Roy E. Scheuerlein , Christopher J. Petti
- 申请人： Roy E. Scheuerlein , Christopher J. Petti
- 专利权人： SanDisk 3D LLC
- 当前专利权人： SanDisk 3D LLC
- 主分类号： G11C5/02
- IPC分类号： G11C5/02 ; H01L21/308
摘要：
A nonvolatile memory device includes a plurality of nonvolatile memory cells arranged in a substantially hexagonal pattern. The nonvolatile memory cells may be pillar shaped non-volatile memory cells which can be patterned using triple or quadruple exposure lithography or by using a self-assembling layer.
公开/授权文献
- US07746680B2 Three dimensional hexagonal matrix memory array 公开/授权日：2010-06-29
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