发明申请
- 专利标题: DIELECTRIC NANOSTRUCTURE AND METHOD FOR ITS MANUFACTURE
- 专利标题(中): 电介质纳米结构及其制造方法
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申请号: US11499132申请日: 2006-08-03
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公开(公告)号: US20090170342A1公开(公告)日: 2009-07-02
- 发明人: Ho-Cheol Kim , Robert D. Miller
- 申请人: Ho-Cheol Kim , Robert D. Miller
- 专利权人: International Business Machines Co.
- 当前专利权人: International Business Machines Co.
- 主分类号: H01L21/47
- IPC分类号: H01L21/47 ; H01L23/58
摘要:
The present invention relates to dielectric nanostructures useful in semiconductor devices and other electronic devices and methods for manufacturing the dielectric nanostructures. The nanostructures generally comprises an array of isolated pillars positioned on a substrate. The methods of the present invention involve using semiconductor technology to manufacture the nanostructures from a mixture of a crosslinkable dielectric material and an amphiphilic block copolymer.
公开/授权文献
- US07569469B2 Dielectric nanostructure and method for its manufacture 公开/授权日:2009-08-04