发明申请
- 专利标题: STRUCTURE AND METHOD OF CREATING ENTIRELY SELF-ALIGNED METALLIC CONTACTS
- 专利标题(中): 创建完全自对准金属接触的结构和方法
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申请号: US11970165申请日: 2008-01-07
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公开(公告)号: US20090174006A1公开(公告)日: 2009-07-09
- 发明人: Jeffery B. Maxson , Cung Do Tran , Huilong Zhu
- 申请人: Jeffery B. Maxson , Cung Do Tran , Huilong Zhu
- 申请人地址: US NY Armonk
- 专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址: US NY Armonk
- 主分类号: H01L29/78
- IPC分类号: H01L29/78 ; H01L21/4763
摘要:
The semiconductor structure is provided that has entirely self-aligned metallic contacts. The semiconductor structure includes at least one field effect transistor located on a surface of a semiconductor substrate. The at least one field effect transistor includes a gate conductor stack comprising a lower layer of polysilicon and an upper layer of a first metal semiconductor alloy, the gate conductor stack having sidewalls that include at least one spacer. The structure further includes a second metal semiconductor alloy layer located within the semiconductor substrate at a footprint of the at least one spacer. The structure also includes a first metallic contact comprising a metal from Group VIII or IB of the Periodic Table of Elements and at least one of W, B, P, Mo and Re located on, and self-aligned to the first metal semiconductor alloy layer and a second metallic contact comprising a metal from Group VIII or IB of the Periodic Table of Elements and at least one of W, B, P, Mo and Re located on, and self-aligned to the second metal semiconductor alloy layer.
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