Invention Application
- Patent Title: Mask for Controlling Line End Shortening and Corner Rounding Arising from Proximity Effects
- Patent Title (中): 用于控制线端缩短的面具和靠近效应产生的角圆
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Application No.: US11971900Application Date: 2008-01-09
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Publication No.: US20090176069A1Publication Date: 2009-07-09
- Inventor: Chin-Cheng Yang , Chiao-Wen Yeh , Chih-Haw Huang
- Applicant: Chin-Cheng Yang , Chiao-Wen Yeh , Chih-Haw Huang
- Applicant Address: TW Hsinchu
- Assignee: Macronix International Co., Ltd.
- Current Assignee: Macronix International Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Main IPC: G03F1/00
- IPC: G03F1/00

Abstract:
A mask for producing an image feature on an image surface during a semiconductor fabrication process is provided, the mask comprising a main feature having opaque areas and transmissive areas arranged in the form of the image feature, wherein each end of the main feature includes at least one of an opaque edge and a transmissive edge, wherein the opaque edge includes a set of transmissive assist features arranged therein such that the set of transmissive assist features align alternately with the transmissive areas of the main feature, and the transmissive edge includes a set of opaque assist features arranged therein such that the set of opaque assist features align alternately with the opaque areas of the main feature.
Public/Granted literature
- US07939225B2 Mask for controlling line end shortening and corner rounding arising from proximity effects Public/Granted day:2011-05-10
Information query