发明申请
US20090176354A1 METHOD FOR FABRICATION OF SINGLE CRYSTAL DIODES FOR RESISTIVE MEMORIES
有权
用于制造用于电阻记忆体的单晶二极管的方法
- 专利标题： METHOD FOR FABRICATION OF SINGLE CRYSTAL DIODES FOR RESISTIVE MEMORIES
- 专利标题（中）： 用于制造用于电阻记忆体的单晶二极管的方法
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申请号： US11970100申请日： 2008-01-07
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公开(公告)号： US20090176354A1公开(公告)日： 2009-07-09
- 发明人: Bipin Rajendran , Thomas Happ , Hsiang-Lan Lung
- 申请人： Bipin Rajendran , Thomas Happ , Hsiang-Lan Lung
- 申请人地址： US NY Armonk US NC Cary TW Hsinchu
- 专利权人： International Business Machines Corporation,Qimonda North America Corporation,Macronix International Co., Ltd.
- 当前专利权人： International Business Machines Corporation,Qimonda North America Corporation,Macronix International Co., Ltd.
- 当前专利权人地址： US NY Armonk US NC Cary TW Hsinchu
- 主分类号： H01L21/20
- IPC分类号： H01L21/20
摘要：
The present invention, in one embodiment, provides a method of producing a PN junction the method including providing a single crystal substrate; forming an insulating layer on the single crystal substrate; forming a via through the insulating layer to provide an exposed portion of the single crystal substrate; forming amorphous Si on at least the exposed portion of the single crystal substrate; converting at least a portion of the amorphous Si into single crystal Si; and forming dopant regions in the single crystal Si. In one embodiment the diode of the present invention is integrated with a memory device.
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