发明申请
- 专利标题: OPTIMIZED SiCN CAPPING LAYER
- 专利标题(中): 优化SiCN覆盖层
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申请号: US11970748申请日: 2008-01-08
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公开(公告)号: US20090176367A1公开(公告)日: 2009-07-09
- 发明人: Heidi Baks , James T. Kelliher , Huang Liu
- 申请人: Heidi Baks , James T. Kelliher , Huang Liu
- 主分类号: H01L21/768
- IPC分类号: H01L21/768
摘要:
A back-end-of-line (BEOL) interconnect structure and a method of forming an interconnect structure. The interconnect structure comprises a conductor, such as copper, embedded in a dielectric layer, and a low-k dielectric capping layer, which acts as a diffusion barrier, on the conductor. A method of forming the BEOL interconnect structure is disclosed, where the capping layer is deposited using plasma-enhanced chemical vapor deposition (PECVD) and is comprised of Si, C, H, and N. The interconnect structure provides improved oxygen diffusion resistance and improved barrier qualities allowing for a reduction in film thickness.