发明申请
- 专利标题： Organic Luminescence Transistor Device and Manufacturing Method Thereof
- 专利标题（中）： 有机发光晶体管器件及其制造方法
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申请号： US12085682申请日： 2006-12-01
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公开(公告)号： US20090179195A1公开(公告)日： 2009-07-16
- 发明人: Katsunari Obata , Shinichi Handa , Takuya Hata , Kenji Nakamura , Atsushi Yoshizawa , Hiroyuki Endo
- 申请人： Katsunari Obata , Shinichi Handa , Takuya Hata , Kenji Nakamura , Atsushi Yoshizawa , Hiroyuki Endo
- 申请人地址： JP TOKYO-TO JP TOKYO-TO JP TOKYO-TO
- 专利权人： DAI NIPPON PRINTING CO., LTD.,PIONEER CORPORATION,NEC CORPORATION
- 当前专利权人： DAI NIPPON PRINTING CO., LTD.,PIONEER CORPORATION,NEC CORPORATION
- 当前专利权人地址： JP TOKYO-TO JP TOKYO-TO JP TOKYO-TO
- 优先权： JP2005-348754 20051202
- 国际申请： PCT/JP2006/324107 WO 20061201
- 主分类号： H01L33/00
- IPC分类号： H01L33/00 ; H01L21/302
摘要：
The invention is an organic luminescence transistor device including: a substrate; an assistance electrode layer provided on a side of an upper surface of the substrate; an insulation film provided on a side of an upper surface of the assistance electrode layer; a first electrode provided locally on a side of an upper surface of the insulation film, the first electrode covering an area of a predetermined size; an electric-charge-injection inhibiting layer provided on an upper surface of the first electrode, the electric-charge-injection inhibiting layer having a shape larger than that of the first electrode in a plan view; an electric-charge injection layer provided on the side of an upper surface of the insulation film at an area not provided with the first electrode or the electric-charge-injection inhibiting layer and on an upper surface of the electric-charge-injection inhibiting layer; a luminescent layer provided on an upper surface of the electric-charge injection layer; and a second electrode layer provided on a side of an upper surface of the luminescent layer.