发明申请
US20090180215A1 TUNNELING MAGNETORESISTIVE EFFECT ELEMENT AND SPIN MOS FIELD-EFFECT TRANSISTOR
有权
隧道磁场效应元件和旋转MOS场效应晶体管
- 专利标题： TUNNELING MAGNETORESISTIVE EFFECT ELEMENT AND SPIN MOS FIELD-EFFECT TRANSISTOR
- 专利标题（中）： 隧道磁场效应元件和旋转MOS场效应晶体管
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申请号： US12342383申请日： 2008-12-23
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公开(公告)号： US20090180215A1公开(公告)日： 2009-07-16
- 发明人: Mizue ISHIKAWA , Yoshiaki Saito , Hideyuki Sugiyama , Tomoaki Inokuchi
- 申请人： Mizue ISHIKAWA , Yoshiaki Saito , Hideyuki Sugiyama , Tomoaki Inokuchi
- 优先权： JP2008-005041 20080111
- 主分类号： G11B5/33
- IPC分类号： G11B5/33
摘要：
A magnetoresistive effect element includes a first ferromagnetic layer, Cr layer, Heusler alloy layer, barrier layer, and second ferromagnetic layer. The first ferromagnetic layer has the body-centered cubic lattice structure. The Cr layer is formed on the first ferromagnetic layer and has the body-centered cubic lattice structure. The Heusler alloy layer is formed on the Cr layer. The barrier layer is formed on the Heusler alloy layer. The second ferromagnetic layer is formed on the barrier layer.