发明申请
- 专利标题: METHOD FOR MANUFACTURING A CMOS DEVICE HAVING DUAL METAL GATE
- 专利标题(中): 制造具有双金属栅的CMOS器件的方法
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申请号: US12013485申请日: 2008-01-14
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公开(公告)号: US20090181504A1公开(公告)日: 2009-07-16
- 发明人: Chien-Ting Lin , Li-Wei Cheng , Che-Hua Hsu , Guang-Hwa Ma , Chin-Sheng Yang
- 申请人: Chien-Ting Lin , Li-Wei Cheng , Che-Hua Hsu , Guang-Hwa Ma , Chin-Sheng Yang
- 主分类号: H01L21/8238
- IPC分类号: H01L21/8238
摘要:
A method for manufacturing a CMOS device includes providing a substrate having a first active region and a second active region defined thereon, forming a first conductive type transistor and a second conductive type transistor respectively in the first and the second active regions, performing a salicide process, forming an ILD layer, performing a first etching process to remove a first gate of the first conductive type transistor and to form an opening while a high-K gate dielectric layer is exposed in a bottom of the opening, and forming at least a first metal layer in the opening.