发明申请
- 专利标题: PHASE CHANGE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
- 专利标题(中): 相变存储器件及其制造方法
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申请号: US12240013申请日: 2008-09-29
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公开(公告)号: US20090184307A1公开(公告)日: 2009-07-23
- 发明人: Sung Min YOON , Byoung Gon Yu , Seung Yun Lee , Young Sam Park , Kyu Jeong Choi , Nam Yeal Lee
- 申请人: Sung Min YOON , Byoung Gon Yu , Seung Yun Lee , Young Sam Park , Kyu Jeong Choi , Nam Yeal Lee
- 申请人地址: KR Daejeon
- 专利权人: ELECTRONIC AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- 当前专利权人: ELECTRONIC AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- 当前专利权人地址: KR Daejeon
- 优先权: KR10-2008-0007208 20080123; KR10-2008-0022402 20080311
- 主分类号: H01L21/06
- IPC分类号: H01L21/06 ; H01L45/00
摘要:
A phase change memory device and a method of fabricating the same are provided. A phase change material layer of the phase change memory device is formed of germanium (Ge)-antimony (Sb)-Tellurium (Te)-based Ge2Sb2+xTe5 (0.12≦x≦0.32), so that the crystalline state is determined as a stable single phase, not a mixed phase of a metastable phase and a stable phase, in phase transition between crystalline and amorphous states of a phase change material, and the phase transition according to increasing temperature directly transitions to the single stable phase from the amorphous state. As a result, set operation stability and distribution characteristics of set state resistances of the phase change memory device can be significantly enhanced, and an amorphous resistance can be maintained for a long time at a high temperature, i.e., around crystallization temperature, and thus reset operation stability and rewrite operation stability of the phase change memory device can be significantly enhanced.