发明申请
- 专利标题: THIN FILM TRANSISTOR SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME
- 专利标题(中): 薄膜晶体管基板及其制造方法
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申请号: US12352143申请日: 2009-01-12
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公开(公告)号: US20090185120A1公开(公告)日: 2009-07-23
- 发明人: Soo-Wan YOON , Ho-Yun BYUN , Jeong-Uk HEO , Chong-Chul CHAI , Nam-Seok LEE , Su-Jeong KIM , Sung-Hwan HONG , Seong-Nam LEE , Jung-Hun LEE , Ji-Yoon JUNG , Kwang-Hyun KIM , Kyong-Ok PARK
- 申请人: Soo-Wan YOON , Ho-Yun BYUN , Jeong-Uk HEO , Chong-Chul CHAI , Nam-Seok LEE , Su-Jeong KIM , Sung-Hwan HONG , Seong-Nam LEE , Jung-Hun LEE , Ji-Yoon JUNG , Kwang-Hyun KIM , Kyong-Ok PARK
- 申请人地址: KR Suwon-si
- 专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址: KR Suwon-si
- 优先权: KR10-2008-0005647 20080118
- 主分类号: G02F1/1333
- IPC分类号: G02F1/1333 ; H01L27/088 ; H01L31/042 ; H01L21/77 ; H01L31/18
摘要:
A thin-film transistor (“TFT”) substrate includes; a substrate including both a light-transmitting region and a light-blocking region, a solar cell pattern disposed on the light-blocking region of the substrate, and comprising at least one solar cell, an insulation layer disposed on the solar cell pattern, and a TFT disposed on the insulation layer.