发明申请
- 专利标题: Silicon integrated angular rate sensor
- 专利标题(中): 硅集成角速率传感器
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申请号: US12011184申请日: 2008-01-24
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公开(公告)号: US20090188318A1公开(公告)日: 2009-07-30
- 发明人: Seyed R. Zarabadi , John C. Christenson , Dan W. Chilcott , Richard G. Forestal , Jack D. Johnson
- 申请人: Seyed R. Zarabadi , John C. Christenson , Dan W. Chilcott , Richard G. Forestal , Jack D. Johnson
- 主分类号: G01P3/44
- IPC分类号: G01P3/44
摘要:
A motion sensor in the form of an angular rate sensor and a method of making a sensor are provided and includes a support substrate and a silicon sensing ring supported by the substrate and having a flexive resonance. Drive electrodes apply electrostatic force on the ring to cause the ring to resonate. Sensing electrodes sense a change in capacitance indicative of vibration modes of resonance of the ring so as to sense motion. A plurality of silicon support rings connect the substrate to the ring. The support rings are located at an angle to substantially match a modulus of elasticity of the silicon, such as about 22.5 degrees and 67.5 degrees, with respect to the crystalline orientation of the silicon.
公开/授权文献
- US07908922B2 Silicon integrated angular rate sensor 公开/授权日:2011-03-22
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