发明申请
- 专利标题： SEMICONDUCTOR TRANSISTOR WITH P TYPE RE-GROWN CHANNEL LAYER
- 专利标题（中）： 具有P型再生通道层的半导体晶体管
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申请号： US12019690申请日： 2008-01-25
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公开(公告)号： US20090189228A1公开(公告)日： 2009-07-30
- 发明人: QINGCHUN ZHANG , SARAH HANEY , ANANT AGARWAL
- 申请人： QINGCHUN ZHANG , SARAH HANEY , ANANT AGARWAL
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336
摘要：
The invention is a device for controlling conduction across a semiconductor body with a P type channel layer between active semiconductor regions of the device and the controlling gate contact. The device, often a MOSFET or an IGBT, includes at least one source, well, and drift region. The P type channel layer may be divided into sections, or divided regions, that have been doped to exhibit N type conductivity. By dividing the channel layer into regions of different conductivity, the channel layer allows better control over the threshold voltage that regulates current through the device. Accordingly, one of the divided regions in the channel layer is a threshold voltage regulating region. The threshold-voltage regulating region maintains its original P type conductivity and is available in the transistor for a gate voltage to invert a conductive zone therein. The conductive zone becomes the voltage regulated conductive channel within the device.
公开/授权文献
- US07795691B2 Semiconductor transistor with P type re-grown channel layer 公开/授权日：2010-09-14
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