发明申请
US20090189246A1 METHOD OF FORMING TRENCH ISOLATION STRUCTURES AND SEMICONDUCTOR DEVICE PRODUCED THEREBY
审中-公开
形成铁素体隔离结构的方法和生产的半导体器件
- 专利标题： METHOD OF FORMING TRENCH ISOLATION STRUCTURES AND SEMICONDUCTOR DEVICE PRODUCED THEREBY
- 专利标题（中）： 形成铁素体隔离结构的方法和生产的半导体器件
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申请号： US12178154申请日： 2008-07-23
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公开(公告)号： US20090189246A1公开(公告)日： 2009-07-30
- 发明人: Hsiao-Che WU , Ming-Yen LI , Wen-Li TSAI
- 申请人： Hsiao-Che WU , Ming-Yen LI , Wen-Li TSAI
- 优先权： TW097103454 20080130
- 主分类号： H01L21/762
- IPC分类号： H01L21/762 ; H01L23/58
摘要：
A method for forming a trench isolation structure and a semiconductor device are provided. The method comprises the following steps: forming a patterned mask on a semiconductor substrate; defining a trench with a predetermined depth D by using the patterned mask, wherein the trench has a bottom and a side wall; forming a liner layer covering the bottom and the side wall of the trench; substantially filling the trench with a flowable oxide from the bottom to a thickness d1 to form an oxide layer; forming a barrier layer with a thickness d′ to cover and completely seal the surface of the oxide layer, wherein d′
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