LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME

Invention Application

US20090191656A1 LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME 有权

Title translation: 液晶显示装置及其制造方法

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Patent Title: LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
Patent Title (中): 液晶显示装置及其制造方法
Application No.: US12363973

Application Date: 2009-02-02
Publication No.: US20090191656A1

Publication Date: 2009-07-30
Inventor: Daisuke INOUE , Shinichi Nishida
Applicant: Daisuke INOUE , Shinichi Nishida
Applicant Address: JP Kanagawa
Assignee: NEC LCD TECHNOLOGIES, LTD.
Current Assignee: NEC LCD TECHNOLOGIES, LTD.
Current Assignee Address: JP Kanagawa
Priority: JP2003-375935 20031105
Main IPC: H01L21/02
IPC: H01L21/02

LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME

Abstract:

An in-plane switching liquid crystal display device is designed in such a way that an angle defined by the lengthwise direction of a common electrode and a pixel electrode and a rubbing direction of an alignment layer is set to 10 to 20°, a cell gap d is set to 2.7 μm or smaller, the dielectric anisotropy Δ∈ of a liquid crystal constituting a liquid crystal layer is set to 8 to 20, a white voltage Vwhite to be applied to the pixel electrode when displaying white is set to 4 to 7 V, and the white voltage Vwhite (V), the dielectric anisotropy Δ∈ of the liquid crystal, the cell gap d (μm) and an interval L (μm) between the common electrode and the pixel electrode satisfy the following expression 11.8 > V white d - 0.6 × L 0.5 × Δɛ - 0.5 > 9.8 .

Abstract(Chinese):

面内切换液晶显示装置的设计使得由公共电极和像素电极的长度方向和取向层的摩擦方向限定的角度设定为10〜20°，电池间隙 d设定为2.7μm以下时，构成液晶层的液晶的介电各向异性Δε设定为8〜20，将显示白色时施加于像素电极的白电压Vwh设定为4〜7 V，白电压Vwhite（V），液晶的介电各向异性Δε，单元间隙d（母）和公共电极与像素电极之间的间隔L（母）满足以下表达式： $11.8>d-xL0.5x> > 9.8。Public/Granted literature US07868985B2
Liquid crystal display device with high response speed and method of manufacturing the same Public/Granted day:2011-01-11Information query Global Dossier EspacenetIPC分类: H 电学 H01 基本电气元件 H01L 半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类） H01L21/00 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 H01L21/02 .半导体器件或其部件的制造或处理Find Agent Technical Fields Latest Chinese Patents Latest US Patents Semantic Search newFriend Links 专利交易门类知识网企业财务服务中科微点API Changelog WeChat Group © 2025 Shanghai Xiaoyi Network Technology Co., Ltd. .
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