Invention Application
US20090195489A1 Thin film transistor substrate having high aperture ratio and method of manufacturing same
审中-公开
具有高开口率的薄膜晶体管基板及其制造方法
- Patent Title: Thin film transistor substrate having high aperture ratio and method of manufacturing same
- Patent Title (中): 具有高开口率的薄膜晶体管基板及其制造方法
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Application No.: US12322487Application Date: 2009-02-02
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Publication No.: US20090195489A1Publication Date: 2009-08-06
- Inventor: Wen-Ming Hung , Yu-Cheng Lin , Chien-Cheng Chen , Chueh-Ju Chen , Yung-Hsun Wu
- Applicant: Wen-Ming Hung , Yu-Cheng Lin , Chien-Cheng Chen , Chueh-Ju Chen , Yung-Hsun Wu
- Assignee: INNOLUX DISPLAY CORP.
- Current Assignee: INNOLUX DISPLAY CORP.
- Priority: TW97103991 20080201
- Main IPC: G09G3/36
- IPC: G09G3/36
Abstract:
An exemplary TFT substrate (200) includes a plurality of first gate lines (218), a plurality of second gate lines (259), a plurality of data lines (238), a plurality of first pixel electrodes (254) and second pixel electrodes (255), and a plurality of first TFTs (201) and second TFTs (203). Each first pixel electrode is connected to a first gate line and a data line via the first TFT. Each second pixel electrode is connected to a second gate line and a data line via the second TFT. The first gate lines are disposed on a layer different from that of the second gate lines, and overlaps with the second gate lines.
Information query
IPC分类:
