发明申请
- 专利标题: SEMICONDUCTOR DEVICE WITH AN IMPROVED OPERATING PROPERTY
- 专利标题(中): 具有改进的操作性能的半导体器件
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申请号: US12405668申请日: 2009-03-17
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公开(公告)号: US20090200582A1公开(公告)日: 2009-08-13
- 发明人: Masaru Yamada , Masafumi Tsutsui , Kiyoyuki Morita
- 申请人: Masaru Yamada , Masafumi Tsutsui , Kiyoyuki Morita
- 申请人地址: JP Osaka
- 专利权人: PANASONIC CORPORATION
- 当前专利权人: PANASONIC CORPORATION
- 当前专利权人地址: JP Osaka
- 优先权: JP2004-366215 20041217
- 主分类号: H01L29/40
- IPC分类号: H01L29/40
摘要:
The semiconductor comprises an n-channel transistor forming region and a p-channel transistor forming region, which are disposed while being sectioned by an element isolation region. The stress caused by contact plugs in the n-channel transistor forming region and the stress caused by contact plugs in the p-channel transistor forming region are made different from each other. With this, it enables to increase the drive current of both the n-channel transistor and p-channel transistor without changing the dimensions of the active region and the element isolation region.
公开/授权文献
- US07821138B2 Semiconductor device with an improved operating property 公开/授权日:2010-10-26