- 专利标题: Single-chip common-drain JFET device and its applications
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申请号: US12385720申请日: 2009-04-17
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公开(公告)号: US20090201079A1公开(公告)日: 2009-08-13
- 发明人: Liang-Pin Tai , Jing-Meng Liu , Hung-Der Su
- 申请人: Liang-Pin Tai , Jing-Meng Liu , Hung-Der Su
- 优先权: TW093118436 20040625
- 主分类号: G05F3/02
- IPC分类号: G05F3/02
摘要:
A single-chip common-drain JFET device comprises a drain, two gates and two source arranged such that two common-drain JFETs are formed therewith. Due to the two JFETs merged within a single chip, no wire bonding connection is needed therebetween, thereby without parasitic inductance and resistance caused by bonding wire, and therefore improving the performance and reducing the package cost. The single-chip common-drain JFET device may be applied in buck converter, boost converter, inverting converter, switch, and two-step DC-to-DC converter to improve their performance and efficiency. Alternative single-chip common-drain JFET devices are also provided for current sense or proportional current generation.
公开/授权文献
- US07768033B2 Single-chip common-drain JFET device and its applications 公开/授权日:2010-08-03
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