发明申请
- 专利标题: POWER SUPPLY CIRCUIT, OVERCURRENT PROTECTION CIRCUIT FOR THE SAME, AND ELECTRONIC DEVICE
- 专利标题(中): 电源电路,相同的过电流保护电路和电子设备
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申请号: US12369907申请日: 2009-02-12
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公开(公告)号: US20090201618A1公开(公告)日: 2009-08-13
- 发明人: Morihito Hasegawa , Hidenobu Ito , Kwok Fai Hui , Toshihiko Kasai , Katsuyuki Yasukouchi
- 申请人: Morihito Hasegawa , Hidenobu Ito , Kwok Fai Hui , Toshihiko Kasai , Katsuyuki Yasukouchi
- 申请人地址: JP Tokyo
- 专利权人: FUJITSU MICROELECTRONICS LIMITED
- 当前专利权人: FUJITSU MICROELECTRONICS LIMITED
- 当前专利权人地址: JP Tokyo
- 优先权: JP2008-031330 20080213
- 主分类号: H02H9/08
- IPC分类号: H02H9/08
摘要:
A power supply circuit includes an output transistor including a source coupled to power supply voltage, and a drain from which output voltage is outputted; a first error amplifier powered by the power supply voltage and outputting a signal based on a potential difference between the output voltage and a reference voltage; a buffer transistor including a gate coupled to the output of the first error amplifier, and a source coupled via a constant current source to the power supply voltage and coupled to a gate of the output transistor; a current detection transistor coupled to the output transistor such that a gate and source are shared; and an overcurrent protection circuit configured to limit the drain current of the buffer transistor based on the increase of the drain current of the current detection transistor and thereby control the output current of the output transistor.
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