发明申请
- 专利标题: Semiconductor laser optical integrated semiconductor device
- 专利标题(中): 半导体激光光集成半导体器件
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申请号: US12320650申请日: 2009-01-30
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公开(公告)号: US20090201964A1公开(公告)日: 2009-08-13
- 发明人: Takashi Kato
- 申请人: Takashi Kato
- 申请人地址: JP Osaka
- 专利权人: Sumitomo Electric Industries, Ltd.
- 当前专利权人: Sumitomo Electric Industries, Ltd.
- 当前专利权人地址: JP Osaka
- 优先权: JP2008-027970 20080207
- 主分类号: H01S5/125
- IPC分类号: H01S5/125 ; H01S3/08
摘要:
A semiconductor laser is a distributed feedback semiconductor laser in which the lasing wavelength can be changed, and includes a semiconductor substrate and a semiconductor layer portion provided on the substrate and including first and second active layers and an intermediate layer that optically couples the first active layer and the second active layer. The first active layer, the intermediate layer, and the second active layer are arranged in that order in a predetermined axis direction. The semiconductor laser further includes a diffraction grating that is optically coupled with the first and second active layers of the semiconductor layer portion, a first electrode and a second electrode for injecting carriers into the first active layer and the second active layer, respectively, and a third electrode for supplying the intermediate layer with a current. The grating extends in the predetermined axis direction and has a period that is uniform in the predetermined axis direction.
公开/授权文献
- US07852897B2 Semiconductor laser optical integrated semiconductor device 公开/授权日:2010-12-14
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