发明申请
US20090202136A1 Polarization analyzing system, exposure method, and method for manufacturing semiconductor device 失效
极化分析系统,曝光方法和制造半导体器件的方法

  • 专利标题: Polarization analyzing system, exposure method, and method for manufacturing semiconductor device
  • 专利标题(中): 极化分析系统,曝光方法和制造半导体器件的方法
  • 申请号: US12385509
    申请日: 2009-04-09
  • 公开(公告)号: US20090202136A1
    公开(公告)日: 2009-08-13
  • 发明人: Ayako NakanoTakashi Sato
  • 申请人: Ayako NakanoTakashi Sato
  • 申请人地址: JP Tokyo
  • 专利权人: Kabushiki Kaisha Toshiba
  • 当前专利权人: Kabushiki Kaisha Toshiba
  • 当前专利权人地址: JP Tokyo
  • 优先权: JPP2004-33376 20040210
  • 主分类号: G06K9/00
  • IPC分类号: G06K9/00
Polarization analyzing system, exposure method, and method for manufacturing semiconductor device
摘要:
A polarization analyzing system includes a data collector collecting information on resist patterns formed over step patterns by first and second lights, the first and second lights being polarized parallel and perpendicular to the step patterns, a residual resist analyzer obtaining first and second relations between a ratio of a space to a line width of the resist patterns and the first and second residues, the first and second residues remaining at orthogonal points of the step patterns and the resist patterns, and a direction chooser choosing an optimum polarization direction reducing residues by comparing the first and second relations.
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