发明申请
- 专利标题: SEMICONDUCTOR DEVICE
- 专利标题(中): 半导体器件
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申请号: US12430972申请日: 2009-04-28
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公开(公告)号: US20090207640A1公开(公告)日: 2009-08-20
- 发明人: Masaki Shiraishi , Noboru Akiyama , Tomoaki Uno , Nobuyoshi Matsuura
- 申请人: Masaki Shiraishi , Noboru Akiyama , Tomoaki Uno , Nobuyoshi Matsuura
- 优先权: JP2004-345798 20041130
- 主分类号: H02M1/00
- IPC分类号: H02M1/00 ; H01L23/48
摘要:
The object of the present invention is to reduce parasitic inductance of a main circuit in a power supply circuit. The present invention provides a non-insulated DC-DC converter having a circuit in which a power MOS*FET for a high-side switch and a power MOS*FET for a low-side switch are connected in series. In the non-insulated DC-DC converter, the power MOS*FET for the high-side switch is formed by a p channel vertical MOS*FET, and the power MOS*FET for the low-side switch is formed by an n channel vertical MOS*FET. Thus, a semiconductor chip formed with the power MOS*FET for the high-side switch and a semiconductor chip formed with the power MOS*FET for the low-side switch are mounted over the same die pad and electrically connected to each other through the die pad.
公开/授权文献
- US07852651B2 Semiconductor device 公开/授权日:2010-12-14
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