发明申请
- 专利标题: METHOD OF MANUFACTURING SINGLE CRYSTAL WIRE
- 专利标题(中): 制造单晶线的方法
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申请号: US12436754申请日: 2009-05-06
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公开(公告)号: US20090211516A1公开(公告)日: 2009-08-27
- 发明人: Se Young Jeong , Chae Ryong Cho , Sang Eon Park , Sung Kyu Kim
- 申请人: Se Young Jeong , Chae Ryong Cho , Sang Eon Park , Sung Kyu Kim
- 优先权: KR10-2004-0075550 20040921
- 主分类号: C30B15/14
- IPC分类号: C30B15/14
摘要:
Disclosed are a single crystal wire and a manufacturing method thereof. The method comprises the steps of: placing into a growth crucible at least one metal selected from the group consisting of gold, copper, silver, aluminum and nickel; heating and melting the metal placed in the growth crucible; growing a single crystal using the metal crystal as a seed by the Czochralski or Bridgman method; cutting the grown single crystal by electric discharge machining; and forming the cut single crystal into a wire. In the method, the grown metal single crystal is formed into a disc-shaped piece by electric discharge machining. The piece is formed into a single crystal wire by wire-cut electric discharge machining, and the single crystal wire can be used as a ring, a pendant or a wire within a high-quality cable making a connection in audio and video systems. Also, the single crystal formed into the disc-shaped piece by electric discharge machining can be used as a substrate and a target for deposition.
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