发明申请
- 专利标题: THERMALIZATION OF GASEOUS PRECURSORS IN CVD REACTORS
- 专利标题(中): CVD反应器中气相前体的热化
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申请号: US12261796申请日: 2008-10-30
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公开(公告)号: US20090214785A1公开(公告)日: 2009-08-27
- 发明人: Chantal Arena , Christiaan J. Werkhoven , Ronald Thomas Bertram, JR. , Ed Lindow
- 申请人: Chantal Arena , Christiaan J. Werkhoven , Ronald Thomas Bertram, JR. , Ed Lindow
- 主分类号: C23C16/44
- IPC分类号: C23C16/44 ; C23C16/54
摘要:
The present invention relates to the field of semiconductor processing and provides apparatus and methods that improve chemical vapor deposition (CVD) of semiconductor materials by promoting more efficient thermalization of precursor gases prior to their reaction. In preferred embodiments, the invention comprises heat transfer structures and their arrangement within a CVD reactor so as to promote heat transfer to flowing process gases. In certain preferred embodiments applicable to CVD reactors transparent to radiation from heat lamps, the invention comprises radiation-absorbent surfaces placed to intercept radiation from the heat lamps and to transfer it to flowing process gases.
公开/授权文献
- US08388755B2 Thermalization of gaseous precursors in CVD reactors 公开/授权日:2013-03-05