发明申请
- 专利标题： MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICES
- 专利标题（中）： 半导体器件的制造方法
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申请号： US12392584申请日： 2009-02-25
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公开(公告)号： US20090215241A1公开(公告)日： 2009-08-27
- 发明人: Katsuhiro SATO , Takahito Nakajima
- 申请人： Katsuhiro SATO , Takahito Nakajima
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 优先权： JPP2008-043257 20080225
- 主分类号： H01L21/762
- IPC分类号： H01L21/762
摘要：
A polysilazane perhydride solution, prepared by dispesing polysilazane perhydride in a solvent containing carbon, is applied on a semiconductor substrate (1), thereby forming a coated film (6), which is heated, volatilizing solvent therein, thereby forming a polysilazane film (7), which is chemical-treated, so the polysilazane film (7) is changed to a silicon dioxide film (8).
公开/授权文献
- US08058139B2 Manufacturing method for semiconductor devices 公开/授权日：2011-11-15
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