发明申请
US20090215250A1 Plasma immersion ion implantation process with reduced polysilicon gate loss and reduced particle deposition
失效
等离子体浸没离子注入工艺，减少了多晶硅栅极损耗并减少了颗粒沉积
- 专利标题： Plasma immersion ion implantation process with reduced polysilicon gate loss and reduced particle deposition
- 专利标题（中）： 等离子体浸没离子注入工艺，减少了多晶硅栅极损耗并减少了颗粒沉积
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申请号： US12072118申请日： 2008-02-22
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公开(公告)号： US20090215250A1公开(公告)日： 2009-08-27
- 发明人: Kartik Santhanam , Manoj Vellaikal , Peter I. Porshnev , Majeed A. Foad
- 申请人： Kartik Santhanam , Manoj Vellaikal , Peter I. Porshnev , Majeed A. Foad
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 主分类号： H01L21/42
- IPC分类号： H01L21/42
摘要：
In plasma immersion ion implantation of a polysilicon gate, a hydride of the dopant is employed as a process gas to avoid etching the polysilicon gate, and sufficient argon gas is added to reduce added particle count to below 50 and to reduce plasma impedance fluctuations to 5% or less.
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