发明申请
- 专利标题: Photovoltaic Devices with Enhanced Efficiencies Using High-Aspect-Ratio Nanostructures
- 专利标题(中): 使用高纵横比纳米结构提高效率的光伏器件
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申请号: US12039900申请日: 2008-02-29
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公开(公告)号: US20090217971A1公开(公告)日: 2009-09-03
- 发明人: Supratik Guha , Oki Gunawan
- 申请人: Supratik Guha , Oki Gunawan
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 主分类号: H01L31/072
- IPC分类号: H01L31/072 ; H01L31/0256 ; H01L31/18
摘要:
Photovoltaic devices and techniques for enhancing efficiency thereof are provided. In one aspect, a photovoltaic device is provided. The photovoltaic device comprises a photocell having a first photoactive layer and a second photoactive layer adjacent to the first photoactive layer so as to form a heterojunction between the first photoactive layer and the second photoactive layer; and a plurality of high-aspect-ratio nanostructures on one or more surfaces of the second photoactive layer. The plurality of high-aspect-ratio nanostructures are configured to act as a scattering media for incident light. The plurality of high-aspect-ratio nanostructures can also be configured to create an optical resonance effect in the incident light.
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