发明申请
- 专利标题： METHOD OF PRODUCING THIN SEMICONDUCTOR STRUCTURES
- 专利标题（中）： 生产薄膜半导体结构的方法
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申请号： US12415467申请日： 2009-03-31
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公开(公告)号： US20090218590A1公开(公告)日： 2009-09-03
- 发明人: Yong Cai , HungShen Chu , Shengmei Zheng , Ka Wah Chan
- 申请人： Yong Cai , HungShen Chu , Shengmei Zheng , Ka Wah Chan
- 申请人地址： CN Hong Kong
- 专利权人： Hong Kong Applied Science and Technology Research Institute
- 当前专利权人： Hong Kong Applied Science and Technology Research Institute
- 当前专利权人地址： CN Hong Kong
- 主分类号： H01L33/00
- IPC分类号： H01L33/00 ; H01L21/02
摘要：
A method of making a thin gallium-nitride (GaN)-based semiconductor structure is provided. According to one embodiment of the invention, the method includes the steps of providing a substrate; sequentially forming one or more semiconductor layers on the substrate; etching a pattern in the one or more semiconductor layers; depositing a dielectrics layer; forming a photoresist on a portion of the dielectrics layer, wherein the portion of the dielectrics layer is deposited on the one or more semiconductor layers; depositing a primer; removing the photoresist layer, wherein the primer on the photoresist is also removed; depositing a superhard material, wherein the superhard material forms in the pattern; and removing the substrate. Accordingly, the superhard material may be selectively deposited in only areas where the superhard material is desired. Vertical GaN-based light emitting devices may then be formed by cutting the semiconductor structure.
公开/授权文献
- US07985971B2 Method of producing thin semiconductor structures 公开/授权日：2011-07-26