发明申请
- 专利标题： SEMICONDUCTOR STORAGE DEVICE AND METHOD FOR MANUFACTURING THE SAME
- 专利标题（中）： 半导体存储器件及其制造方法
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申请号： US12354271申请日： 2009-01-15
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公开(公告)号： US20090218614A1公开(公告)日： 2009-09-03
- 发明人: Kenji AOYAMA , Hisataka Meguro , Satoshi Nagashima
- 申请人： Kenji AOYAMA , Hisataka Meguro , Satoshi Nagashima
- 优先权： JP2008-52185 20080303
- 主分类号： H01L29/792
- IPC分类号： H01L29/792 ; H01L21/336
摘要：
A semiconductor storage device has a plurality of word lines formed with a predetermined interval on a semiconductor substrate, a selection transistor provided at an end portion of the plurality of word lines, a first insulating film formed so as to cover side surfaces of the word lines, a side surface of the selection transistor, and a surface of the semiconductor substrate between the word lines, a high-permittivity film formed on the first insulation film, a second insulating film formed so as to cover the upper surface of the word lines and the selection transistor, a first air-gap portion located between the word lines and surrounded by the high-permittivity film and the second insulating film, and a second air-gap portion formed via the first insulating film and the high-permittivity film at a sidewall portion, which opposes the selection transistor, of the word line adjacent to the selection transistor, an upper portion of the second air-gap portion being covered by the second insulating film.
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