发明申请
- 专利标题： Semiconductor Radiation Detector With Thin Film Platinum Alloyed Electrode
- 专利标题（中）： 半导体辐射检测器与薄膜铂合金电极
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申请号： US12358393申请日： 2009-01-23
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公开(公告)号： US20090218647A1公开(公告)日： 2009-09-03
- 发明人: Gary L. Smith , Csaba Szeles
- 申请人： Gary L. Smith , Csaba Szeles
- 申请人地址： US PA Saxonburg
- 专利权人： EV PRODUCTS, INC.
- 当前专利权人： EV PRODUCTS, INC.
- 当前专利权人地址： US PA Saxonburg
- 主分类号： H01L31/00
- IPC分类号： H01L31/00
摘要：
A compound semiconductor radiation detector includes a body of compound semiconducting material having an electrode on at least one surface thereof. The electrode includes a layer of a compound of a first element and a second element. The first element is platinum and the second element includes at least one of the following: chromium, cobalt, gallium, germanium, indium, molybdenum, nickel, palladium, ruthenium, silicon, silver, tantalum, titanium, tungsten, vanadium, zirconium, manganese, iron, magnesium, copper, tin, or gold. The layer can further include sublayers, each of which is made from a different one of the second elements and platinum as the first element.
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