发明申请
- 专利标题： Bulk Acoustic Wave Device with a Semiconductor Layer
- 专利标题（中）： 具有半导体层的体声波器件
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申请号： US12040088申请日： 2008-02-29
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公开(公告)号： US20090218912A1公开(公告)日： 2009-09-03
- 发明人: Mohamed Abd Allah , Werner Weber , Robert Thalhammer , Jyrki Kaitila
- 申请人： Mohamed Abd Allah , Werner Weber , Robert Thalhammer , Jyrki Kaitila
- 主分类号： H01L41/083
- IPC分类号： H01L41/083
摘要：
A bulk acoustic wave device includes a first electrode, a second electrode, a piezoelectric layer arranged between the first and second electrodes and a semiconductor layer arranged between the first and second electrodes. The semiconductor layer is electrically isolated from the first electrode.
公开/授权文献
- US07977850B2 Bulk acoustic wave device with a semiconductor layer 公开/授权日：2011-07-12