发明申请
- 专利标题： LASER DIODE WITH IMPROVED HEAT DISSIPATION
- 专利标题（中）： 激光二极管与改进的散热
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申请号： US12041079申请日： 2008-03-03
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公开(公告)号： US20090219966A1公开(公告)日： 2009-09-03
- 发明人: Wei-Sin TAN , Jennifer Mary Barnes
- 申请人： Wei-Sin TAN , Jennifer Mary Barnes
- 主分类号： H01S5/00
- IPC分类号： H01S5/00 ; H01S5/223
摘要：
A laser diode structure that includes two different insulator layers, one to maintain good optical confinement, typically located at the sides of the laser ridge, and another to improve the heat dissipation properties, typically located on the etched surfaces away from the ridge.
公开/授权文献
- US08073031B2 Laser diode with improved heat dissipation 公开/授权日：2011-12-06
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