发明申请
- 专利标题: INTEGRATED CIRCUIT SYSTEM EMPLOYING RESISTANCE ALTERING TECHNIQUES
- 专利标题(中): 集成电路系统采用电阻调整技术
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申请号: US12040761申请日: 2008-02-29
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公开(公告)号: US20090221117A1公开(公告)日: 2009-09-03
- 发明人: Shyue Seng Tan , Lee Wee Teo , Chung Foong Tan , Jae Gon Lee , Elgin Kiok Boone Quek
- 申请人: Shyue Seng Tan , Lee Wee Teo , Chung Foong Tan , Jae Gon Lee , Elgin Kiok Boone Quek
- 申请人地址: SG Singapore
- 专利权人: CHARTERED SEMICONDUCTOR MANUFACTURING LTD.
- 当前专利权人: CHARTERED SEMICONDUCTOR MANUFACTURING LTD.
- 当前专利权人地址: SG Singapore
- 主分类号: H01L21/8234
- IPC分类号: H01L21/8234 ; H01L21/20
摘要:
An integrated circuit system that includes: providing a substrate including a first region and a second region; forming a first device over the first region and a resistance device over the second region; forming a first dielectric layer and a second dielectric layer over the substrate; removing a portion of the second dielectric layer; and annealing the integrated circuit system to remove dopant from the resistance device.