发明申请
- 专利标题： SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US12412128申请日： 2009-03-26
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公开(公告)号： US20090224318A1公开(公告)日： 2009-09-10
- 发明人: Makoto Hatori , Yutaka Hoshino
- 申请人： Makoto Hatori , Yutaka Hoshino
- 优先权： JP2004-263670 20040910
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
The invention improves the performance of a semiconductor device. A metal silicide film is formed by a silicide process on a gate electrode and an n+-type source region of an LDMOSFET, and no such metal silicide film is formed on an n−-type offset drain region, an n-type offset drain region, and an n+-type drain region. A side wall spacer comprising a silicon film is formed via an insulating film on the side wall of the gate electrode over the drain side thereof, and a field plate electrode is formed by this side wall spacer. The field plate electrode does not extend above the gate electrode, and a metal silicide film is formed over the entire upper surface of the gate electrode in the silicide process.
公开/授权文献
- US08129784B2 Semiconductor device 公开/授权日：2012-03-06
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