发明申请
- 专利标题： MONOMER, RESIST COMPOSITION, AND PATTERNING PROCESS
- 专利标题（中）： 单体，耐性组合物和方法
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申请号： US12398483申请日： 2009-03-05
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公开(公告)号： US20090226843A1公开(公告)日： 2009-09-10
- 发明人: Jun HATAKEYAMA , Takeshi KINSHO , Masaki OHASHI , Kazuhiro KATAYAMA
- 申请人： Jun HATAKEYAMA , Takeshi KINSHO , Masaki OHASHI , Kazuhiro KATAYAMA
- 申请人地址： JP Tokyo
- 专利权人： SHIN-ETSU CHEMICAL CO., LTD.
- 当前专利权人： SHIN-ETSU CHEMICAL CO., LTD.
- 当前专利权人地址： JP Tokyo
- 优先权： JP2008-054561 20080305; JP2008-200430 20080804
- 主分类号： G03F7/20
- IPC分类号： G03F7/20 ; G03F7/004 ; C08F120/10
摘要：
A pattern is formed by applying a positive resist composition comprising a polymer comprising hydroxyalkylnaphthalene-bearing recurring units and acid labile group-bearing recurring units onto a substrate to form a resist film, heat treating and exposing the resist film to radiation, heat treating and developing the resist film with a developer to form a first pattern, and causing the resist film to crosslink and cure with the aid of heat or of acid and heat. A second pattern is then formed in the space area of the first pattern. The double patterning process reduces the pitch between patterns to one half.
公开/授权文献
- US08057982B2 Monomer, resist composition, and patterning process 公开/授权日：2011-11-15