发明申请
- 专利标题： Semiconductor device capable of suppressing short channel effect and method of fabricating the same
- 专利标题（中）： 能够抑制短路效应的半导体装置及其制造方法
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申请号： US12382385申请日： 2009-03-16
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公开(公告)号： US20090230451A1公开(公告)日： 2009-09-17
- 发明人: Chang-Hyun Lee , Jung-Dal Choi
- 申请人： Chang-Hyun Lee , Jung-Dal Choi
- 优先权： KR10-2008-0024520 20080317
- 主分类号： H01L29/788
- IPC分类号： H01L29/788 ; H01L29/66 ; H01L29/792
摘要：
A semiconductor device includes a semiconductor substrate including at least one memory channel region and at least one memory source/drain region, the memory channel region and the memory source/drain region being arranged alternately, and at least one word line on the memory channel region, wherein the memory source/drain region has a higher net impurity concentration than the memory channel region.
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