发明申请
- 专利标题: Hybrid Process for Forming Metal Gates of MOS Devices
- 专利标题(中): MOS器件金属门的混合工艺
-
申请号: US12047113申请日: 2008-03-12
-
公开(公告)号: US20090230479A1公开(公告)日: 2009-09-17
- 发明人: Peng-Fu Hsu , Yong-Tian Hou , Ssu-Yi Li , Kuo-Tai Huang , Mong Song Liang
- 申请人: Peng-Fu Hsu , Yong-Tian Hou , Ssu-Yi Li , Kuo-Tai Huang , Mong Song Liang
- 主分类号: H01L27/092
- IPC分类号: H01L27/092
摘要:
A semiconductor structure includes a first MOS device including a first gate, and a second MOS device including a second gate. The first gate includes a first high-k dielectric over a semiconductor substrate; a second high-k dielectric over the first high-k dielectric; a first metal layer over the second high-k dielectric, wherein the first metal layer dominates a work-function of the first MOS device; and a second metal layer over the first metal layer. The second gate includes a third high-k dielectric over the semiconductor substrate, wherein the first and the third high-k dielectrics are formed of same materials, and have substantially a same thickness; a third metal layer over the third high-k dielectric, wherein the third metal layer and the second metal layer are formed of same materials, and have substantially a same thickness; and a fourth metal layer over the third metal layer.
公开/授权文献
- US08536660B2 Hybrid process for forming metal gates of MOS devices 公开/授权日:2013-09-17