发明申请
- 专利标题： Semiconductor Device and Method for Making Same
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US12049405申请日： 2008-03-17
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公开(公告)号： US20090230557A1公开(公告)日： 2009-09-17
- 发明人: Stefan Eckert , Thomas Leonhardt , Joerg Pantfoerder , Lutz Quas
- 申请人： Stefan Eckert , Thomas Leonhardt , Joerg Pantfoerder , Lutz Quas
- 申请人地址： DE Neubiberg
- 专利权人： INFINEON TECHNOLOGIES AG
- 当前专利权人： INFINEON TECHNOLOGIES AG
- 当前专利权人地址： DE Neubiberg
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L21/768
摘要：
One or more embodiments are related to a semiconductor device, comprising: a metallic layer having a top surface and a sidewall surface; an intermediate layer disposed on a sidewall surface of the metallic layer; a dielectric layer disposed over the metallic layer, the dielectric layer having an opening formed therethrough; and a conductive material disposed within the opening, the conductive material at least partially overlying the top surface of the metallic layer, the conductive material being electrically coupled to the metallic layer.